NTR2101PT1G
  • 量产中
  • SOT-23-3 (TO-236)
  • EAR99
产品描述:
Single P-Channel 8 V 120 mOhm 15 nC 0.96 W Silicon SMT Mosfet - SOT-23
标准包装:1
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Power - Max 960mW
Rds On (Max) @ Id, Vgs 52 mOhm @ 3.5A, 4.5V
Drain to Source Voltage (Vdss) 8V
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Category Discrete Semiconductor Products
FET Type MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id 1V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape (CT)
Package / Case TO-236-3, SC-59, SOT-23-3
FET Feature Standard
Supplier Device Package SOT-23-3 (TO-236)
Part Status Active
Manufacturer ON Semiconductor
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 1173pF @ 4V
ECCN EAR99
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