Power - Max | 960mW |
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Rds On (Max) @ Id, Vgs | 52 mOhm @ 3.5A, 4.5V |
Drain to Source Voltage (Vdss) | 8V |
Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET P-Channel, Metal Oxide |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Cut Tape (CT) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
FET Feature | Standard |
Supplier Device Package | SOT-23-3 (TO-236) |
Part Status | Active |
Manufacturer | ON Semiconductor |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 1173pF @ 4V |
ECCN | EAR99 |
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