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| 产品描述：
Hong Kong
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 230W |
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| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 75A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| FET Feature | Standard |
| Supplier Device Package | TO-262 |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 4520pF @ 50V |
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