TPS1100DR
  • 量产中
  • 8-SOIC
产品描述:
MOSFET P-CH 15V 1.6A 8-SOIC
标准包装:2500
数据手册: --
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Package / Case 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss) 15V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Manufacturer Texas Instruments
Vgs(th) (Max) @ Id 1.5V @ 250µA
Operating Temperature -40°C ~ 150°C (TJ)
Categories Discrete Semiconductor Products
Power Dissipation (Max) 791mW (Ta)
Vgs (Max) +2V, -15V
Rds On (Max) @ Id, Vgs 180 mOhm @ 1.5A, 10V
Supplier Device Package 8-SOIC
Part Status Active
FET Type P-Channel
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
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