IRLMS6702TRPBF specifications -Ameya360 electronic components purchase network


IRLMS6702TRPBF

ACTIVE Micro6™(TSOP-6) EAR99
Product description : Single P-Channel 20 V 0.375 Ohm 8.8 nC HEXFET® Power Mosfet - MICRO-6
SPQ：3000
Datasheet : IRLMS6702TRPBF.pdf

Power - Max	1.7W
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.6A, 4.5V
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Part Status	Active
Manufacturer	Infineon Technologies
Series	HEXFET®
Vgs(th) (Max) @ Id	700mV @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Cut Tape (CT)
Package / Case	SOT-23-6
FET Feature	Standard
Supplier Device Package	Micro6™(TSOP-6)
Gate Charge (Qg) @ Vgs	8.8nC @ 4.5V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	210pF @ 15V
ECCN	EAR99

Datasheet： IRLMS6702TRPBF.pdf

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Stock code :	130512
Mfg name :	Infineon Technologies
MPN :	IRLMS6702TRPBF
Product description :	Single P-Channel 20 V 0.375 Ohm 8.8 nC HEXFET® Power Mosfet - MICRO-6

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