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| 产品描述：
Single N-Channel 80 V 28 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA
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| 标准包装：1 | ||
| 数据手册： |
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| 安装类型 | 表面贴装 |
|---|---|
| FET 类型 | MOSFET N 通道，金属氧化物 |
| 不同 Id 时的 Vgs（th）（最大值） | 2.5V @ 250µA |
| 不同 Vgs 时的栅极电荷（Qg） | 33nC @ 4.5V |
| 电流 - 连续漏极（Id）（25°C 时） | 30A（Tc） |
| 漏源极电压（Vdss） | 80V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Categories | Discrete Semiconductor Products |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D-Pak |
| Drain to Source Voltage (Vdss) | 80V |
| Series | HEXFET® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Infineon Technologies |
| Packaging | Tube |
| Part Status | Not For New Designs |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Vgs (Max) | ±16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| 封装/外壳 | TO-252-3，DPak（2 引线+接片），SC-63 |
| FET 功能 | 逻辑电平门 |
| 供应商器件封装 | D-Pak |
| 不同 Id，Vgs 时的 Rds On（最大值） | 28 毫欧 @ 23A，10V |
| 不同 Vds 时的输入电容（Ciss） | 1890pF @ 25V |
| 功率 - 最大值 | 120W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Categories | Discrete Semiconductor Products |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D-Pak |
| Drain to Source Voltage (Vdss) | 80V |
| Series | HEXFET® |
| Power Dissipation (Max) | 120W (Tc) |
| Power Dissipation (Max) | 120W (Tc) |
| Manufacturer | Infineon Technologies |
| Packaging | Tube |
| Part Status | Not For New Designs |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Vgs (Max) | ±16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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