SI2367DS-T1-GE3 specifications -Ameya360 electronic components purchase network


SI2367DS-T1-GE3

ACTIVE SOT-23-3 (TO-236) EAR99
Product description : Si2367DS Series P-Channel 20 V 66 mOhm 0.96 W Surface Mount Mosfet - TO-236
SPQ：1
Datasheet : SI2367DS-T1-GE3.pdf

Power - Max	1.7W
Rds On (Max) @ Id, Vgs	66 mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Cut Tape (CT)
Package / Case	TO-236-3, SC-59, SOT-23-3
FET Feature	Standard
Supplier Device Package	SOT-23-3 (TO-236)
Gate Charge (Qg) @ Vgs	23nC @ 8V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	561pF @ 10V
ECCN	EAR99

Datasheet： SI2367DS-T1-GE3.pdf

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Stock code :	129926
Mfg name :	Vishay
MPN :	SI2367DS-T1-GE3
Product description :	Si2367DS Series P-Channel 20 V 66 mOhm 0.96 W Surface Mount Mosfet - TO-236

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