IRF7507TRPBF specifications -Ameya360 electronic components purchase network


IRF7507TRPBF

ACTIVE EAR99
Product description : Dual N/P-Channel 20 V 0.2/0.4 Ohm 8/8.2 nC HEXFET® Power Mosfet - MICRO-8
SPQ：1
Datasheet : IRF7507TRPBF.pdf

Qg - Gate Charge:	5.3 nC
Packaging:	Reel
Manufacturer:	Infineon
Transistor Polarity:	N-Channel, P-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	20 V, - 20 V
Vgs - Gate-Source Voltage:	12 V
Mounting Style:	SMD/SMT
Rds On - Drain-Source Resistance:	135 mOhms, 270 mOhms
Number of Channels:	2 Channel
Pd - Power Dissipation:	1.25 W
Factory Pack Quantity:	4000
Brand:	Infineon Technologies
Package / Case:	Micro-8
Id - Continuous Drain Current:	2.4 A, - 1.7 A
Configuration:	1 N-Channel, 1 P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
ECCN	EAR99

Datasheet： IRF7507TRPBF.pdf

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Stock code :	129920
Mfg name :	Infineon Technologies
MPN :	IRF7507TRPBF
Product description :	Dual N/P-Channel 20 V 0.2/0.4 Ohm 8/8.2 nC HEXFET® Power Mosfet - MICRO-8

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