IRFZ46NLPBF specifications -Ameya360 electronic components purchase network


IRFZ46NLPBF

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
SPQ：1
Datasheet : IRFZ46NLPBF.pdf

Rds On - Drain-Source Resistance:	16.5 mOhms
Packaging:	Tube
Number of Channels:	1 Channel
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Height:	4.83 mm
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Length:	10.67 mm
Width:	9.65 mm
Qg - Gate Charge:	48 nC
Pd - Power Dissipation:	120 W
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-252-3
Id - Continuous Drain Current:	53 A
Vds - Drain-Source Breakdown Voltage:	55 V
Unit Weight:	0.139332 oz
Mounting Style:	SMD/SMT

Datasheet： IRFZ46NLPBF.pdf

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Stock code :	129710
Mfg name :	Infineon Technologies
MPN :	IRFZ46NLPBF
Product description :	Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262

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