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| 产品描述：
Single N-Channel 30 V 0.019 Ohm 50 nC HEXFET® Power Mosfet - TO-252AA
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| 标准包装：2000 | ||
| 数据手册： | ||
| ECAD模型:
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Design Resources | IRLR3103 Saber Model IRLR3103 Spice Model |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 33A, 10V |
| Power - Max | 107W |
| Supplier Device Package | D-Pak |
| Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1600pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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