MBT3906DW1T1G specifications -Ameya360 electronic components purchase network


MBT3906DW1T1G

ACTIVE EAR99
Product description : MBT Series 40 V 200 mA SMT PNP Silicon Dual General Purpose Transistor - SOT-363
SPQ：1
Datasheet : MBT3906DW1T1G.pdf

Packaging:	Reel
Width:	1.35 mm
Minimum Operating Temperature:	- 55 C
Package / Case:	SOT-363
Gain Bandwidth Product fT:	250 MHz
Unit Weight:	0.000212 oz
Emitter- Base Voltage VEBO:	5 V
Length:	2.2 mm
DC Collector/Base Gain hfe Min:	60
Series:	MBT3906DW1
Factory Pack Quantity:	3000
Part # Aliases:	MBT3906DW1T2G
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Collector- Base Voltage VCBO:	- 40 V
Collector-Emitter Saturation Voltage:	- 0.4 V
Pd - Power Dissipation:	150 mW
Height:	1 mm
Configuration:	Dual
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	0.2 A
Continuous Collector Current:	- 200 mAdc
Manufacturer:	ON Semiconductor
Transistor Polarity:	PNP
Brand:	ON Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	- 40 V
ECCN	EAR99

Datasheet： MBT3906DW1T1G.pdf

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Stock code :	126333
Mfg name :	onsemi
MPN :	MBT3906DW1T1G
Product description :	MBT Series 40 V 200 mA SMT PNP Silicon Dual General Purpose Transistor - SOT-363

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