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| 产品描述：
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P
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| 标准包装：30 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Current - Collector Pulsed (Icm) | 160A |
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| Power - Max | 283W |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 40ns/142ns |
| Part Status | Active |
| Manufacturer | STMicroelectronics |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Mounting Type | Through Hole |
| Switching Energy | 498mJ (on), 363mJ (off) |
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Test Condition | 400V, 40A, 5 Ohm, 15V |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 80A |
| Category | Discrete Semiconductor Products |
| Gate Charge | 210nC |
| Family | Transistors - IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Input Type | Standard |
| ECCN | EAR99 |
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