| SI1062X-T1-GE3 | ||
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| 产品描述：
Single N-Channel 20 V 0.42 Ω 1.8 nC Surface mount Power Mosfet - SC-89
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 1 nC |
| Pd - Power Dissipation: | 220 mW |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | 0.4 V to 1 V |
| Vgs - Gate-Source Voltage: | 8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 7.5 S |
| Series: | SI1062X |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 500 mA |
| Rise Time: | 14 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SC-89-3 |
| Configuration: | Single |
| Unit Weight: | 0.001058 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 2 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 16 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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