| SI5513CDC-T1-GE3 | ||
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| 产品描述：
Dual N&P-Channel 20 V 0.055/0.15 Ω Surface Mount Mosfet - ChipFET-1206-8
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Qg - Gate Charge: | 2.8 nC, 3.9 nC |
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| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | ChipFET-8 |
| Vgs - Gate-Source Voltage: | 12 V |
| Mounting Style: | SMD/SMT |
| Forward Transconductance - Min: | 5 S, 12 S |
| Series: | SI5 |
| Factory Pack Quantity: | 3000 |
| Part # Aliases: | SI5509DC-T1-GE3 |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 45 mOhms, 120 mOhms |
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 3.1 W |
| Tradename: | TrenchFET |
| Configuration: | N-Channel, P-Channel |
| Unit Weight: | 0.002998 oz |
| Number of Channels: | 2 Channel |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel, P-Channel |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 4 A |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
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