| SI1926DL-T1-E3 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Power - Max | 510mW |
|---|---|
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 340mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 370mA |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| FET Feature | Logic Level Gate |
| Supplier Device Package | SC-70-6 (SOT-363) |
| Gate Charge (Qg) @ Vgs | 1.4nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 18.5pF @ 30V |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：