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| 产品描述：
N-Channel 30 V 2.8 mΩ Surface Mount STripFET VI Power MosFet -TO-252
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Power - Max | 110W |
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| Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Part Status | Active |
| Manufacturer | STMicroelectronics |
| Series | DeepGATE™, STripFET™ VI |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Feature | Standard |
| Supplier Device Package | D-Pak |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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