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| 产品描述:
MUN5211DW1 Series 2 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363
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| 标准包装:1 | ||
| 数据手册: |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
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| Resistor - Base (R1) (Ohms) | 10k |
| Power - Max | 250mW |
| Resistor - Emitter Base (R2) (Ohms) | 10k |
| PCN Design/Specification | Copper Wire 08/Jun/2009 |
| Online Catalog | NPN Pre-Biased Transistor Arrays |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| PCN Assembly/Origin | Wafer Source Addition 26/Nov/2014 |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册: |
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