| IPD031N06L3 G | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
MOSFET N-CH 60V 100A TO252-3
|
||
| 标准包装：2500 | ||
| 数据手册： | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | OptiMOS™ |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 13000pF @ 30V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 100A, 10V |
| Power - Max | 167W |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) @ Vgs | 79nC @ 4.5V |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2.2V @ 93µA |
| Packaging | Digi-Reel® |
| 数据手册： |
|---|
登录之后就可发表评论
