AUIRFR4105Z specifications -Ameya360 electronic components purchase network


AUIRFR4105Z

ACTIVE EAR99
Product description : Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK
SPQ：75
Datasheet : AUIRFR4105Z.pdf

Qg - Gate Charge:	18 nC
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	2.39 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	24 ns
Length:	6.73 mm
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	26 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	55 V
Transistor Type:	1 N-Channel
Rds On - Drain-Source Resistance:	24.5 mOhms
Width:	6.22 mm
Pd - Power Dissipation:	48 W
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	10 ns
Manufacturer:	Infineon
Factory Pack Quantity:	75
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	30 A
Rise Time:	40 ns
ECCN	EAR99

Datasheet： AUIRFR4105Z.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	117787
Mfg name :	Infineon Technologies
MPN :	AUIRFR4105Z
Product description :	Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：