Packaging: | Reel |
---|---|
P1dB - Compression Point: | 20 dBm |
Gain: | 17.5 dB |
Manufacturer: | Broadcom Limited |
Transistor Polarity: | N-Channel |
Technology: | GaAs |
RoHS: | Details |
Vgs - Gate-Source Breakdown Voltage: | - 5 V |
Id - Continuous Drain Current: | 145 mA |
Configuration: | Single Dual Source |
Type: | GaAs pHEMT |
Mounting Style: | SMD/SMT |
Operating Frequency: | 2 GHz |
Product: | RF JFET |
Forward Transconductance - Min: | 230 mmho |
Pd - Power Dissipation: | 725 mW |
Factory Pack Quantity: | 3000 |
Brand: | Broadcom / Avago |
Package / Case: | SOT-343 |
Product Category: | RF JFET Transistors |
Vds - Drain-Source Breakdown Voltage: | 5.5 V |
NF - Noise Figure: | 0.5 dB |
Transistor Type: | pHEMT |
Maximum Operating Temperature: | + 160 C |