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| 产品描述：
Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC
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| 数据手册： |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 570nC @ 10V |
| Rds On (Max) @ Id, Vgs | 1.85 mOhm @ 195A, 10V |
| Supplier Device Package | TO-247AC |
| Series | HEXFET® |
| Package / Case | TO-247-3 |
| Manufacturer | Infineon Technologies |
| Part Status | Active |
| Vgs (Max) | ±20V |
| Categories | Discrete Semiconductor Products |
| Input Capacitance (Ciss) (Max) @ Vds | 19230pF @ 50V |
| Mounting Type | Through Hole |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 75V |
| Power Dissipation (Max) | 520W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Packaging | Tube |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| 数据手册： |
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