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| Product description : Single P-Channel 100V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK | ||
| SPQ：800 | ||
| Datasheet : |
- Specifications
- Product Attributes
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| Power - Max | 3.1W |
|---|---|
| Rds On (Max) @ Id, Vgs | 117 mOhm @ 14A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Part Status | Not For New Designs |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | Standard |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1450pF @ 25V |
| ECCN | EAR99 |
| Datasheet： |
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Availability2Request Stock Notification
Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
$1.75135
￥14.54610
| stock | 800 | Update On 2025-05-02 |
|---|---|---|
| Lead-Time | 0Weeks | |
| Supplier SPQ/MOQ | 800/332 | |
| Location | -- | |
| DateCode | 2301 |
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