IRFS4229TRLPBF
  • ACTIVE
  • D2PAK
  • EAR99
Product description : Single N-Channel 250 V 48 mOhm 72 nC HEXFET® Power Mosfet - D2PAK
SPQ:800
Datasheet :
ECAD Model:
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FET Feature Standard
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max 330W
Supplier Device Package D2PAK
Gate Charge (Qg) @ Vgs 110nC @ 10V
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Vgs(th) (Max) @ Id 5V @ 250µA
Packaging Tape & Reel (TR)  
ECCN EAR99
Rds On (Max) @ Id, Vgs 48 mOhm @ 26A, 10V
PCN Assembly/Origin Mosfet Backend Wafer Processing 23/Oct/2013 Alternate Assembly Site 11/Nov/2013
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Series HEXFET®
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 4560pF @ 25V
RoHS Lead free / RoHS Compliant
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