IRFR220NTRPBF
  • ACTIVE
  • D-Pak
  • EAR99
Product description : Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA
SPQ:1
Datasheet :
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Power - Max 43W
Rds On (Max) @ Id, Vgs 600 mOhm @ 2.9A, 10V
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series HEXFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape (CT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature Standard
Supplier Device Package D-Pak
Gate Charge (Qg) @ Vgs 23nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 300pF @ 25V
ECCN EAR99
Datasheet:
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