| MJD117-1G | ||
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| 产品描述：
Complementary Darlington Power Transistors
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
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| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 2A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Packaging | Tube |
| Frequency - Transition | 25MHz |
| Power - Max | 1.75W |
| Supplier Device Package | I-Pak |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| ECCN | EAR99 |
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