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| Product description : Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Qg - Gate Charge: | 80 nC |
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| Packaging: | Tube |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Unit Weight: | 0.211644 oz |
| Mounting Style: | Through Hole |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 130 W |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-220-3 |
| Id - Continuous Drain Current: | 72 A |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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库存信息3到货提醒
供应商编码:SP1027
线下原厂及原厂授权代理商库存，接单后需要再次确认价格和数量
$1.95316
￥16.222259615452586
查看价格阶梯
| 1+ | $1.95316 |
|---|---|
| 10+ | $1.81366 |
| 100+ | $1.37222 |
| 250+ | $1.35842 |
| 500+ | $1.26573 |
| 1000+ | $1.08469 |
| 2000+ | $1.0833 |
| 5000+ | $0.86971 |
| 库存数量 | 5620 | 库存更新于 2022-12-11 |
|---|---|---|
| 订货周期 | 24Weeks | |
| Supplier SPQ/MOQ | 1/1 | |
| 库存地 | -- | |
| 生产批次 | 2231 |
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