NTLJS4114NT1G specifications -Ameya360 electronic components purchase network


NTLJS4114NT1G

ACTIVE EAR99
Product description : N-Channel 30 V 35 mOhm 1.92 W Surface Mount Power MOSFET - DFN-6W
SPQ：1
Datasheet : NTLJS4114NT1G.pdf

Minimum Operating Temperature:	- 55 C
Packaging:	Reel
Product:	MOSFET Small Signal
Technology:	Si
Height:	0.75 mm
Vgs - Gate-Source Voltage:	12 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	5 ns
Forward Transconductance - Min:	8 S
Series:	NTLJS4114N
Factory Pack Quantity:	3000
Brand:	ON Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	6 A
Rise Time:	9 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	20.3 mOhms
Width:	2 mm
Pd - Power Dissipation:	700 mW
Package / Case:	WDFN-6
Configuration:	Single Quad Drain
Mounting Style:	SMD/SMT
Fall Time:	9 ns
Length:	2 mm
Manufacturer:	ON Semiconductor
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	20 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	30 V
Type:	MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： NTLJS4114NT1G.pdf

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Stock code :	111473
Mfg name :	onsemi
MPN :	NTLJS4114NT1G
Product description :	N-Channel 30 V 35 mOhm 1.92 W Surface Mount Power MOSFET - DFN-6W

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