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| 产品描述：
Single P-Channel 55 V 0.1 Ohm 35nC HEXFET® Power Mosfet - D2PAK
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 100 mOhms |
| Pd - Power Dissipation: | 68 W |
| Package / Case: | TO-252-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 41 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 800 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 19 A |
| Rise Time: | 55 ns |
| Type: | HEXFET Power MOSFET |
| ECCN | EAR99 |
| Qg - Gate Charge: | 23.3 nC |
| Packaging: | Reel |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 13 ns |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 30 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 55 V |
| Transistor Type: | 1 P-Channel |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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