IRF9Z34NSTRRPBF specifications -Ameya360 electronic components purchase network


IRF9Z34NSTRRPBF

ACTIVE EAR99
Product description : Single P-Channel 55 V 0.1 Ohm 35nC HEXFET® Power Mosfet - D2PAK
SPQ：1
Datasheet : IRF9Z34NSTRRPBF.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	100 mOhms
Pd - Power Dissipation:	68 W
Package / Case:	TO-252-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	41 ns
Manufacturer:	Infineon
Factory Pack Quantity:	800
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	19 A
Rise Time:	55 ns
Type:	HEXFET Power MOSFET
ECCN	EAR99
Qg - Gate Charge:	23.3 nC
Packaging:	Reel
Technology:	Si
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	13 ns
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	30 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 55 V
Transistor Type:	1 P-Channel
Maximum Operating Temperature:	+ 175 C

Datasheet： IRF9Z34NSTRRPBF.pdf

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Stock code :	110559
Mfg name :	Infineon Technologies
MPN :	IRF9Z34NSTRRPBF
Product description :	Single P-Channel 55 V 0.1 Ohm 35nC HEXFET® Power Mosfet - D2PAK

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