IXTH02N250
  • 量产中
  • TO-247 (IXTH)
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
标准包装:1
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
FET Feature Standard
Package / Case TO-247-3
Drain to Source Voltage (Vdss) 2500V (2.5kV)
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Part Status Active
Manufacturer IXYS
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 116pF @ 25V
ECCN EAR99
Rds On (Max) @ Id, Vgs 450 Ohm @ 50mA, 10V
Power - Max 83W
Supplier Device Package TO-247 (IXTH)
Gate Charge (Qg) @ Vgs 7.4nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id 4.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
数据手册:
登录之后就可发表评论

请输入下方图片中的验证码:

验证码