IPP023N10N5AKSA1 | ||
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Product description : Single N-Channel 100 V 2.3 mOhm 168 nC OptiMOS™ Power Mosfet - TO-220-3 | ||
SPQ:1 | ||
Datasheet : |
Packaging: | Tube |
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Qg - Gate Charge: | 168 nC |
Pd - Power Dissipation: | 375 W |
Package / Case: | TO-220-3 |
Configuration: | Single |
Unit Weight: | 0.211644 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 33 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 500 |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 77 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 2.8 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Vgs - Gate-Source Voltage: | +/- 20 V |
Mounting Style: | Through Hole |
Fall Time: | 29 ns |
Forward Transconductance - Min: | 124 S |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | IPP023N10N5 SP001120504 |
RoHS: | Details |
Id - Continuous Drain Current: | 120 A |
Rise Time: | 26 ns |
Maximum Operating Temperature: | + 175 C |
Datasheet: |
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Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
See more prices
9+ | $9.486 |
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10+ | $7.3315 |
50+ | $6.634 |
100+ | $6.293 |
200+ | $5.983 |
500+ | $5.6265 |
stock | 864 | Update On 2025-02-02 |
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Lead-Time | 0Weeks | |
Supplier SPQ/MOQ | 1/9 | |
Location | -- | |
DateCode | 2344 |
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