IPP023N10N5AKSA1
IPP023N10N5AKSA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 100 V 2.3 mOhm 168 nC OptiMOS™ Power Mosfet - TO-220-3
SPQ:1
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Packaging: Tube
Qg - Gate Charge: 168 nC
Pd - Power Dissipation: 375 W
Package / Case: TO-220-3
Configuration: Single
Unit Weight: 0.211644 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 33 ns
Manufacturer: Infineon
Factory Pack Quantity: 500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 77 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 2.8 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: Through Hole
Fall Time: 29 ns
Forward Transconductance - Min: 124 S
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: IPP023N10N5 SP001120504
RoHS:  Details
Id - Continuous Drain Current: 120 A
Rise Time: 26 ns
Maximum Operating Temperature: + 175 C
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Supplier Code:SP1027

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stock864Update On
2025-02-02
Lead-Time0Weeks
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DateCode2344

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