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| 产品描述：
P-Channel 30 V 65 mOhm Surface Mount Enhancement Mode Mosfet - SOT-26-6
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | SOT-23-6 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 336pF @ 25V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 4A, 10V |
| Power - Max | 1.25W |
| Supplier Device Package | SOT-26 |
| Gate Charge (Qg) @ Vgs | 7.8nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| 数据手册： |
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