CSD16321Q5 specifications -Ameya360 electronic components purchase network


CSD16321Q5

ACTIVE
Product description : QFN 8/ Single N, 25V, 2.1m, 14nC
SPQ：2500
Datasheet : CSD16321Q5.pdf
ECAD Model:

Qg - Gate Charge:	14 nC
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	VSON-Clip-8
Height:	1.05 mm (Max)
Vgs - Gate-Source Voltage:	10 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	9 ns
Manufacturer:	Texas Instruments
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	27 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	25 V
Transistor Type:	1 N-Channel
Rds On - Drain-Source Resistance:	2.1 mOhms
Width:	6.1 mm (Max)
Pd - Power Dissipation:	3.1 W
Tradename:	NexFET
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	17 ns
Length:	5.1 mm (Max)
Series:	CSD16321Q5
Factory Pack Quantity:	2500
Brand:	Texas Instruments
RoHS:	Details
Id - Continuous Drain Current:	31 A
Rise Time:	15 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： CSD16321Q5.pdf

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