Width: | 6.35 mm |
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Rds On - Drain-Source Resistance: | 19 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TDSON-8 |
Height: | 1.1 mm |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 15 ns |
Forward Transconductance - Min: | 57 S, 29 S |
Series: | OptiMOS 3 |
Factory Pack Quantity: | 5000 |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 25 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 150 V |
Type: | OptiMOS 3 Power-Transistor |
Maximum Operating Temperature: | + 150 C |
Packaging: | Reel |
Qg - Gate Charge: | 23 nC |
Pd - Power Dissipation: | 125 W |
Tradename: | OptiMOS |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Fall Time: | 6 ns |
Length: | 5.35 mm |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | BSC190N15NS3GATMA1 BSC190N15NS3GXT SP000416636 |
RoHS: | Details |
Id - Continuous Drain Current: | 50 A |
Rise Time: | 53 ns |
Transistor Type: | 1 N-Channel |
数据手册: |
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