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| 产品描述：
Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
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| 标准包装：1 | ||
| 数据手册： -- |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
|---|---|
| Resistor - Base (R1) (Ohms) | 2.2k |
| Power - Max | 330mW |
| Resistor - Emitter Base (R2) (Ohms) | 2.2k |
| Current - Collector (Ic) (Max) | 500mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 100MHz |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | PG-SOT23-3 |
| Part Status | Last Time Buy |
| Manufacturer | Infineon Technologies |
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Packaging | Tape & Reel (TR) |
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