BCR503E6327HTSA1 specifications -Ameya360 electronic components purchase network


BCR503E6327HTSA1

ACTIVE PG-SOT23-3 EAR99
Product description : Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
SPQ：1
Datasheet : --

Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Resistor - Base (R1) (Ohms)	2.2k
Power - Max	330mW
Resistor - Emitter Base (R2) (Ohms)	2.2k
Current - Collector (Ic) (Max)	500mA
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V
ECCN	EAR99
Frequency - Transition	100MHz
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Type	NPN - Pre-Biased
Supplier Device Package	PG-SOT23-3
Part Status	Last Time Buy
Manufacturer	Infineon Technologies
Family	Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector Cutoff (Max)	100nA (ICBO)
Packaging	Tape & Reel (TR)

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Stock code :	1021841
Mfg name :	Infineon Technologies
MPN :	BCR503E6327HTSA1
Product description :	Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ

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