| PMGD280UN,115 | ||
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| 产品描述：
PMGD280UN Series 20 V 660 mOhm 0.89 nC 0.4 W Dual N-Channel SMT MOSFET - SOT-363
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| 标准包装：3000 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 870mA |
| PCN Packaging | Lighter Reels 02/Jan/2014 |
| PCN Design/Specification | Resin Hardener 02/Jul/2013 |
| FET Type | 2 N-Channel (Dual) |
| Series | TrenchMOS™ |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 45pF @ 20V |
| Rds On (Max) @ Id, Vgs | 340 mOhm @ 200mA, 4.5V |
| Power - Max | 400mW |
| Supplier Device Package | 6-TSSOP |
| Standard Package | 3,000 |
| Gate Charge (Qg) @ Vgs | 0.89nC @ 4.5V |
| Packaging | Tape & Reel (TR) |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Arrays |
| Mounting Type | Surface Mount |
| ECCN | ECL99 |
| 数据手册： |
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