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| 产品描述：
Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 200 mOhms |
| Pd - Power Dissipation: | 79 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 15 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 50 |
| Typical Turn-Off Delay Time: | 45 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 100 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 38.7 nC |
| Packaging: | Tube |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 4 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 46 ns |
| Forward Transconductance - Min: | 3.2 S |
| Transistor Polarity: | P-Channel |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 14 A |
| Rise Time: | 58 ns |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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