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| 产品描述：
Single N-Channel 800 V 450 Ohm 64 nC CoolMOS™ Power Mosfet - TO-220-3
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| 标准包装：50 | ||
| 数据手册： -- |
- 规格参数
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| Width: | 4.57 mm |
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| Rds On - Drain-Source Resistance: | 390 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Height: | 15.95 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 10 ns |
| Length: | 10.36 mm |
| Series: | XPP11N80 |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 72 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 85 nC |
| Pd - Power Dissipation: | 156 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 25 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SP000683158 SPP11N80C3 SPP11N80C3XK |
| RoHS: | Details |
| Id - Continuous Drain Current: | 11 A |
| Rise Time: | 15 ns |
| Maximum Operating Temperature: | + 150 C |
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库存信息3到货提醒
供应商编码:SP1027
线下原厂及原厂授权代理商库存，接单后需要再次确认价格和数量
$4.62443
￥38.408889920459295
查看价格阶梯
| 11+ | $4.62443 |
|---|---|
| 50+ | $3.89329 |
| 100+ | $3.67583 |
| 500+ | $3.3201 |
| 1000+ | $3.12248 |
| 库存数量 | 1000 | 库存更新于 2022-12-09 |
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| 订货周期 | 0Weeks | |
| Supplier SPQ/MOQ | 50/11 | |
| 库存地 | -- | |
| 生产批次 | -- |
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