SI7956DP-T1-E3 | ||
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产品描述:
MOSFET 2N-CH 150V 2.6A PPAK SO-8
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标准包装:1 | ||
数据手册: |
Power - Max | 1.4W |
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Rds On (Max) @ Id, Vgs | 105 mOhm @ 4.1A, 10V |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 2.6A |
Part Status | Active |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
ECCN | ECL99 |
Package / Case | PowerPAK® SO-8 Dual |
FET Feature | Logic Level Gate |
Supplier Device Package | PowerPAK® SO-8 Dual |
Gate Charge (Qg) @ Vgs | 26nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | 2 N-Channel (Dual) |
Family | Transistors - FETs, MOSFETs - Arrays |
Mounting Type | Surface Mount |
Packaging | Tape & Reel (TR) |
数据手册: |
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请输入下方图片中的验证码: