SI7956DP-T1-E3
SI7956DP-T1-E3
  • 量产中
  • PowerPAK® SO-8 Dual
  • ECL99
产品描述:
MOSFET 2N-CH 150V 2.6A PPAK SO-8
标准包装:1
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Power - Max 1.4W
Rds On (Max) @ Id, Vgs 105 mOhm @ 4.1A, 10V
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 2.6A
Part Status Active
Manufacturer Vishay Siliconix
Series TrenchFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
ECCN ECL99
Package / Case PowerPAK® SO-8 Dual
FET Feature Logic Level Gate
Supplier Device Package PowerPAK® SO-8 Dual
Gate Charge (Qg) @ Vgs 26nC @ 10V
Category Discrete Semiconductor Products
FET Type 2 N-Channel (Dual)
Family Transistors - FETs, MOSFETs - Arrays
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
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