SI7956DP-T1-E3 specifications -Ameya360 electronic components purchase network


SI7956DP-T1-E3

ACTIVE PowerPAK® SO-8 Dual ECL99
Product description : MOSFET 2N-CH 150V 2.6A PPAK SO-8
SPQ：1
Datasheet : SI7956DP-T1-E3.pdf

Power - Max	1.4W
Rds On (Max) @ Id, Vgs	105 mOhm @ 4.1A, 10V
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	2.6A
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
ECCN	ECL99
Package / Case	PowerPAK® SO-8 Dual
FET Feature	Logic Level Gate
Supplier Device Package	PowerPAK® SO-8 Dual
Gate Charge (Qg) @ Vgs	26nC @ 10V
Category	Discrete Semiconductor Products
FET Type	2 N-Channel (Dual)
Family	Transistors - FETs, MOSFETs - Arrays
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR)

Datasheet： SI7956DP-T1-E3.pdf

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