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JAN2N3439

2N32XX Series NPN 350 V 1 A Through Hole Low Power Silicon Transistor - TO-39

Manufacturer Microchip Technology
MPN JAN2N3439
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet JAN2N3439.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
-Power - Max 800mW
-Supplier Device Package TO-39 (TO-205AD)
-Part Status Active
-Manufacturer Microsemi IRE Division
-Series Military, MIL-PRF-19500/368
-Mounting Type Through Hole
-DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
-ECCN EAR99
-Package / Case TO-205AD, TO-39-3 Metal Can
-Transistor Type NPN
-Current - Collector (Ic) (Max) 1A
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 350V
-Family Transistors - Bipolar (BJT) - Single
-Current - Collector Cutoff (Max) 2µA
-Packaging Bulk

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