| -Power - Max |
300mW |
| -Frequency - Transition |
100MHz |
| -Transistor Type |
2 PNP (Dual) |
| -Current - Collector (Ic) (Max) |
100mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
40V |
| -Mounting Type |
Surface Mount |
| -Operating Temperature |
150°C (TJ) |
| -Packaging |
Tape & Reel (TR) |
| -Package / Case |
SOT-563, SOT-666 |
| -Vce Saturation (Max) @ Ib, Ic |
200mV @ 5mA, 50mA |
| -Supplier Device Package |
SOT-666 |
| -Part Status |
Active |
| -Manufacturer |
NXP Semiconductors |
| -Family |
Transistors - Bipolar (BJT) - Arrays |
| -Current - Collector Cutoff (Max) |
100nA (ICBO) |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1mA, 6V |
