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PMGD290XN,115

PMGD290XN Series 20 V 350 mO 0.41 W 0.72 nC Dual N-Channel TrenchMOS - SOT-363

Manufacturer NXP Semiconductors
MPN PMGD290XN,115
SPQ 1
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet PMGD290XN,115.pdf

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Product parameter

-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 350 mOhm @ 200mA, 4.5V
-Power - Max 410mW
-Supplier Device Package 6-TSSOP
-PCN Packaging Lighter Reels 02/Jan/2014
-Current - Continuous Drain (Id) @ 25掳C 860mA
-Packaging   Digi-Reel庐  
-Online Catalog N-Channel Logic Level Gate FETs
-Family FETs - Arrays
-Mounting Type Surface Mount
-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 20V
-Standard Package   1
-Gate Charge (Qg) @ Vgs 0.72nC @ 4.5V
-PCN Design/Specification Resin Hardener 02/Jul/2013
-FET Type 2 N-Channel (Dual)
-Series TrenchMOS鈩�/a>
-Vgs(th) (Max) @ Id 1.5V @ 250碌A
-Input Capacitance (Ciss) @ Vds 34pF @ 20V

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