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PHB191NQ06LT,118

PHB191NQ06LT Series 55V 3.7 mOhm N-Channel TrenchMOS Logic Level FET - D2PAK

Manufacturer Nexperia
MPN PHB191NQ06LT,118
SPQ 800
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet PHB191NQ06LT,118.pdf
SP1027
Dollar $1.95285
RMB ¥16.21968
Stock type SP1027
Stock num 1600
Stepped
num price
67+ $1.95285

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Power - Max 300W
-Supplier Device Package D2PAK
-Gate Charge (Qg) @ Vgs 95.6nC @ 5V
-Online Catalog N-Channel Logic Level Gate FETs
-Family FETs - Single
-Vgs(th) (Max) @ Id 2V @ 1mA
-Packaging Digi-Reel®  
-FET Feature Logic Level Gate
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Power - Max 300W
-Supplier Device Package D2PAK
-Standard Package   1
-Packaging   Digi-Reel®  
-Online Catalog N-Channel Logic Level Gate FETs
-Family FETs - Single
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 3.7 mOhm @ 25A, 10V
-PCN Assembly/Origin Alternative Leadframe Supplier 17/Jun/2014
-Drain to Source Voltage (Vdss) 55V
-Current - Continuous Drain (Id) @ 25°C 75A (Tc)
-FET Type MOSFET N-Channel, Metal Oxide
-Series TrenchMOS™
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 7665pF @ 25V
-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 3.7 mOhm @ 25A, 10V
-PCN Assembly/Origin Alternative Leadframe Supplier 17/Jun/2014
-Drain to Source Voltage (Vdss) 55V
-Current - Continuous Drain (Id) @ 25°C 75A (Tc)
-Gate Charge (Qg) @ Vgs 95.6nC @ 5V
-FET Type MOSFET N-Channel, Metal Oxide
-Series TrenchMOS™
-Vgs(th) (Max) @ Id 2V @ 1mA
-Input Capacitance (Ciss) @ Vds 7665pF @ 25V

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