English 简体中文 日本語

PMGD780SN,115

PMGD780SN Series 60 V 0.92 Ohm 410 mW Dual N-Channel TrenchMOS FET - SOT-363

Manufacturer NXP Semiconductors
MPN PMGD780SN,115
SPQ 3000
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet PMGD780SN,115.pdf
SP1027
Dollar $0.16105
RMB ¥1.33762
Stock type SP1027
Stock num 3000
Stepped
num price
3000+ $0.16105

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 920 mOhm @ 300mA, 10V
-Power - Max 410mW
-Supplier Device Package 6-TSSOP
-PCN Packaging Lighter Reels 02/Jan/2014
-Current - Continuous Drain (Id) @ 25掳C 490mA
-Packaging   Cut Tape (CT)  
-Online Catalog N-Channel Logic Level Gate FETs
-Family FETs - Arrays
-Mounting Type Surface Mount
-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 60V
-Standard Package   1
-Gate Charge (Qg) @ Vgs 1.05nC @ 10V
-PCN Design/Specification Resin Hardener 02/Jul/2013
-FET Type 2 N-Channel (Dual)
-Series TrenchMOS鈩�/a>
-Vgs(th) (Max) @ Id 2.5V @ 250碌A
-Input Capacitance (Ciss) @ Vds 23pF @ 30V

Copyright © 1997-2013 NetEase. All Rights Reserved.