| -Minimum Operating Temperature: |
- 55 C |
| -Rds On - Drain-Source Resistance: |
66 mOhms |
| -Pd - Power Dissipation: |
8.33 W |
| -Package / Case: |
DFN2020-6 |
| -Configuration: |
Dual |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
7 ns |
| -Transistor Polarity: |
P-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
33 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
- 20 V |
| -Transistor Type: |
2 P-Channel |
| -Qg - Gate Charge: |
5 nC |
| -Packaging: |
Reel |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
- 1 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
15 ns |
| -Manufacturer: |
NXP |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
NXP Semiconductors |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
- 4.2 A |
| -Rise Time: |
16 ns |
| -Maximum Operating Temperature: |
+ 150 C |
