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PMDPB58UPE,115

DFN2020-6/20 V dual P-channel Trench MOSFET/12NC:934066845115

Manufacturer Nexperia
MPN PMDPB58UPE,115
SPQ 3000
ECCN EAR99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 6-UDFN Exposed Pad
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 3.6A
-PCN Packaging Lighter Reels 02/Jan/2014
-Packaging   Digi-Reel®  
-Online Catalog P-Channel Logic Level Gate FETs
-Vgs(th) (Max) @ Id 950mV @ 250µA
-Input Capacitance (Ciss) @ Vds 804pF @ 10V
-Rds On (Max) @ Id, Vgs 67 mOhm @ 2A, 4.5V
-Power - Max 515mW
-Supplier Device Package 6-HUSON (2x2)
-Standard Package   1
-Gate Charge (Qg) @ Vgs 9.5nC @ 4.5V
-FET Type 2 P-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-ECCN EAR99

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