PHN203,518

MOSFET 2N-CH 30V 6.3A SOT96-1

Manufacturer NXP Semiconductors MPN PHN203,518 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet PHN203,518.pdf

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	30V
-Standard Package	2,500
-Current - Continuous Drain (Id) @ 25掳C	6.3A
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	30 mOhm @ 7A, 10V
-Power - Max	2W
-Supplier Device Package	8-SO
-Gate Charge (Qg) @ Vgs	14.6nC @ 10V
-Packaging	Tape & Reel (TR)
-Series	TrenchMOS鈩�/a>
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	560pF @ 20V