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1SS352(TH3,F,D)

DIODE GEN PURP 80V 100MA USC

Manufacturer Toshiba
MPN 1SS352(TH3,F,D)
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction 125°C (Max)
-Capacitance @ Vr, F 3pF @ 0V, 1MHz
-Supplier Device Package USC
-Product Training Modules General Purpose Discrete Items
-Diode Type Standard
-Reverse Recovery Time (trr) 4ns
-Online Catalog Standard Diode
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
-Current - Average Rectified (Io) 100mA
-Package / Case SC-76, SOD-323
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Speed Small Signal =< 200mA (Io), Any Speed
-Current - Reverse Leakage @ Vr 500nA @ 80V
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 80V

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