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RN1702JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Manufacturer Toshiba
MPN RN1702JE(TE85L,F)
SPQ 4000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
-Resistor - Base (R1) (Ohms) 10k
-Power - Max 100mW
-Resistor - Emitter Base (R2) (Ohms) 10k
-Standard Package   1
-Packaging   Digi-Reel®  
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
-Frequency - Transition 250MHz
-Package / Case SOT-553
-Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
-Supplier Device Package ESV
-Current - Collector (Ic) (Max) 100mA
-Online Catalog NPN Pre-Biased Transistor Arrays
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)

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