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TRS10E65C,S1Q

DIODE SCHOTTKY 650V 10A TO220-2L

Manufacturer Toshiba
MPN TRS10E65C,S1Q
SPQ 50
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction 175掳C (Max)
-Package / Case TO-220-2
-Standard Package   50
-Diode Type Silicon Carbide Schottky
-Reverse Recovery Time (trr) 0ns
-Online Catalog Silicon Carbide Schottky Diode
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A
-Current - Average Rectified (Io) 10A (DC)
-Supplier Device Package TO-220-2L
-Packaging   Tube  
-Speed No Recovery Time > 500mA (Io)
-Current - Reverse Leakage @ Vr 90碌A @ 650V
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 650V

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