English 简体中文 日本語

PMGD8000LN,115

MOSFET 2N-CH 30V 0.125A 6TSSOP

Manufacturer NXP Semiconductors
MPN PMGD8000LN,115
SPQ 3000
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-PCN Obsolescence/ EOL Multiple Devices 03/Jul/2013
-Supplier Device Package 6-TSSOP
-Gate Charge (Qg) @ Vgs 0.35nC @ 4.5V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Vgs(th) (Max) @ Id 1.5V @ 100µA
-Packaging Cut Tape (CT)  
-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-PCN Obsolescence/ EOL Multiple Devices 03/Jul/2013
-Supplier Device Package 6-TSSOP
-Gate Charge (Qg) @ Vgs 0.35nC @ 4.5V
-PCN Design/Specification Resin Hardener 02/Jul/2013
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 8 Ohm @ 10mA, 4V
-Power - Max 200mW
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 125mA
-PCN Design/Specification Resin Hardener 02/Jul/2013
-Series TrenchMOS™
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 18.5pF @ 5V
-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 8 Ohm @ 10mA, 4V
-Power - Max 200mW
-Drain to Source Voltage (Vdss) 30V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 125mA
-Packaging   Cut Tape (CT)  
-Series TrenchMOS鈩�/a>
-Vgs(th) (Max) @ Id 1.5V @ 100碌A
-Input Capacitance (Ciss) @ Vds 18.5pF @ 5V

Copyright © 1997-2013 NetEase. All Rights Reserved.